SloveniaA research team at The Hong Kong Polytechnic University (PolyU) has developed a novel tunnelling field-effect transistor (TFET) using 2D nanomaterials, overcoming the physical 'Boltzmann limit' that restricts the energy efficiency of traditional transistors. This breakthrough allows for significantly reduced gate-voltage requirements and improved performance, potentially enabling ultra-low-power, high-performance integrated circuits crucial for future AI chips. The research, led by Prof. Jianhua Hao, utilized ultra-thin heterostructures of 2D bismuth and indium selenide, achieving subthreshold swing values well below the 60 mV decade⁻¹ limit. The findings were published in the journal Science, marking a significant advancement in semiconductor technology.
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