Chinese researchers have achieved initial success in developing semiconductor processing nodes smaller than 3-nm using older deep ultraviolet (DUV) lithography technology, rather than the more advanced extreme ultraviolet (EUV) tools produced by ASML. This comes amid U.S. sanctions that prevent ASML from exporting its cutting-edge EUV machines to China. The breakthrough was reported by Taiwanese media Digitimes, which cited comments from Ye Tianchun of the Chinese Academy of Sciences' Institute of Microelectronics. The research team claims they have completed early integration of stacked nanosheet-channel gate-all-around (GAA) CMOS transistors using DUV tools, marking a potential new pathway for China's sub-3-nm chip manufacturing.
Bias read (Center): The article presents technical developments in semiconductor manufacturing without overtly favoring any political perspective. It focuses on technological advancements and geopolitical factors like U.S. sanctions but does not exhibit clear ideological bias in its framing or sourcing.






